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搜索結果(共 200 個)
對比 型號 廠商 描述 均價 ECAD 數據手冊 替代料
對比 IRLML6401TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
¥2.4320 footprint 3dModel
對比 IRLML6402TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
¥2.2236 footprint 3dModel
廣告 ULQ2003AD Texas Instruments
50-V, 7-ch darlington transistor array
對比 IRLML2502TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
¥2.7794 footprint 3dModel
對比 IRLML6401TRPBF International Rectifier
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
- footprint 3dModel
對比 IRLML6402TRPBF International Rectifier
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
- footprint 3dModel
對比 IRLML2502TRPBF International Rectifier
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
-
對比 IRLML5203TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, MICRO-3
¥3.1964 footprint 3dModel
對比 IRLML2402TRPBF Infineon Technologies AG
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
¥1.5982 footprint 3dModel
對比 IRLML2803TRPBF Infineon Technologies AG
Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
¥1.7371 footprint 3dModel
對比 IRLML6344TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
¥3.8912 footprint 3dModel
對比 IRLML0100TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, ROHS COMPLIANT, MICRO-3
¥2.2236 footprint 3dModel
對比 IRLML0060TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
¥3.0574 footprint 3dModel
對比 IRLML9301TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
¥2.5710 footprint 3dModel
對比 IRLML5103TRPBF Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3
¥2.3625 footprint 3dModel
對比 IRLML5203TRPBF International Rectifier
Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
-
對比 IRLML2402TRPBF International Rectifier
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
-
對比 IRLML6302TRPBF Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3
¥3.0574
對比 IRLML2803TRPBF International Rectifier
Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
- footprint 3dModel
對比 IRLML2244TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
¥2.5710 footprint 3dModel
對比 IRLML0030TRPBF Infineon Technologies AG
Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
¥2.2236 footprint 3dModel
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對比欄
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